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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N3711360mW NPN silicon general purpose AF transistordistributor-3-55°C150°C137 K
IRF3711LHEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110AInternational-Rectifier-3-55°C150°C245 K
IRF3711SHEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110AInternational-RectifierDDPak3-55°C150°C245 K
IRFU3711HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.5mOhm, ID = 110AInternational-Rectifier-3-55°C175°C239 K
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