| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| RFD3N08L | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 69 K |
| RFD3N08LSM | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 69 K |
| SD103N08S10PBC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| SD103N08S20MBC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| SD103N08S20MC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| SD103N08S20MSC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| SD103N08S20PBC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| SD103N08S20PC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| SD103N08S20PSC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| STP53N08 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
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