| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHP33N10 | PowerMOS transistor | Philips-Semiconductors | - | - | - | - | 73 K |
| SD103N10S20MC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| SD103N10S20MSC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| SD103N10S20PBC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| SD103N10S20PC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| SD103N10S20PSC | Fast recovery diode | International-Rectifier | - | 2 | -40°C | 125°C | 416 K |
| STP33N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP33N10FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP3N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 197 K |
| STP3N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 197 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
