| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXFE23N100 | 1000V HiPerFET power MOSFET | distributor | ISOPLUS227 | 4 | -55°C | 150°C | 653 K |
| IXFH13N100 | 1000V power MOSFET | distributor | - | 3 | -55°C | 150°C | 82 K |
| IXFN23N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 85 K |
| IXFT13N100 | 1000V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 75 K |
| MTB3N100E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 262 K |
| MTP3N100E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 206 K |
| OM3N100SA | 1000V; up to 6 Amp, N-channel MOSFET | distributor | - | 4 | -55°C | 150°C | 40 K |
| OM3N100ST | 1000V; up to 6 Amp, N-channel MOSFET | distributor | - | 4 | -55°C | 150°C | 40 K |
| STP3N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 197 K |
| STP3N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 197 K |
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