Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MTE53N50E | ISOTOP TMOS E-FET power field effect transistor | Motorola | SOT | 4 | -40°C | 150°C | 167 K |
MTP3N50E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 251 K |
PHB3N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
PHB3N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
PHB3N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 78 K |
PHP3N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
PHP3N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 78 K |
PHP3N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 78 K |
PHX3N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT186A | 3 | -55°C | 150°C | 72 K |
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