| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGT1S3N60B3S | 7A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 141 K |
| HGT1S3N60C3DS | 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | Intersil-Corporation | - | - | - | - | 273 K |
| HGTD3N60B3S | 7A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 141 K |
| HGTD3N60C3S | 6A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 243 K |
| HGTP3N60B3 | 7A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 141 K |
| HGTP3N60B3D | 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 154 K |
| HGTP3N60C3 | 6A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 243 K |
| MTP3N60 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 200 K |
| MTP3N60FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 200 K |
| STB3N60-1 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 115 K |
| 1 [2] [3] [4] [5] |
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