| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQD3N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 575 K |
| FQP3N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 569 K |
| FQPF3N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 557 K |
| FQU3N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 575 K |
| HGTD3N60A4S | 600V, SMPS Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 189 K |
| HGTP3N60A4 | 600V, SMPS Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 189 K |
| HGTP3N60C3D | TRANSISTOR IGBT TO-220 | Fairchild-Semiconductor | - | - | - | - | 327 K |
| PHP3N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 79 K |
| PHX3N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
| PHX3N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
| [1] [2] 3 [4] [5] |
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