Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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3SK1132-T | N-channel MOS FET | NEC-Electronics-Inc- | SST | - | - | - | 392 K |
3SK153 | Silicon N channel field effect transistor for TV tuner, UHF RF amplifier applications and TV tuner, VHF wide band RF amplifier applications | Toshiba | - | 4 | -55°C | 125°C | 212 K |
3SK153 | Silicon N channel field effect transistor for TV tuner, UHF RF amplifier applications and TV tuner, VHF wide band RF amplifier applications | Toshiba | - | 4 | -55°C | 125°C | 212 K |
3SK165A | GaAs N-channel Dual Gate MES FET | Sony-Semiconductor | - | - | - | - | 59 K |
3SK166A | GaAs N-channel Dual Gate MES FET | Sony-Semiconductor | - | - | - | - | 72 K |
3SK180 | N-channel MOS silicon FET (dual gate), high-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2046A | 4 | - | - | 123 K |
3SK186 | Small signal high frequency amplifier field effect (FET) transistor | distributor | - | - | - | - | 31 K |
3SK189 | GaAs dual gate MES FET, UHF amp, mixer application | SANYO-Electric-Co--Ltd- | 2046 | 4 | - | - | 105 K |
3SK194 | Small signal high frequency amplifier field effect (FET) transistor | distributor | - | - | - | - | 37 K |
3SK195 | Silicon N channel field effect transistor for TV tuner, VHF RF amplifier applications and FM tuner applications | Toshiba | - | 4 | -55°C | 125°C | 223 K |
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