| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCP54-10 | NPN medium power transistors | Philips-Semiconductors | SOT223 | - | - | - | 43 K |
| BCX54-10 | NPN medium power transistors | Philips-Semiconductors | SOT89 | - | - | - | 42 K |
| BCX54-10 | NPN medium power transistors | Philips-Semiconductors | SOT89 | - | - | - | 42 K |
| BZG04-10 | Transient voltage suppressor diodes | Philips-Semiconductors | SOD106 | - | - | - | 31 K |
| BZG04-100 | Transient voltage suppressor diodes | Philips-Semiconductors | SOD106 | - | - | - | 31 K |
| TIBPAL16R4-10CFN | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | FN | 20 | - | - | 210 K |
| TIBPAL16R4-10CN | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | N | 20 | - | - | 210 K |
| TIBPAL16R4-10MFKB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | FK | 20 | -55°C | 125°C | 215 K |
| TIBPAL16R4-10MJB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | J | 20 | -55°C | 125°C | 215 K |
| TIBPAL16R4-10MWB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | W | 20 | -55°C | 125°C | 215 K |
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