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40-2

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AT28C040-20BC4-Megabit (512K x 8) paged EEPROM, 80mA activ current, 3mA standby currentATMEL-CorporationSide braze320°C70°C332 K
DL-6140-201High power laser diodeSANYO-Electric-Co--Ltd--3-10°C60°C74 K
DL-7140-201High power laser diodeSANYO-Electric-Co--Ltd--3-10°C60°C73 K
MX040-20Standard Rectifier (trr more than 500ns)Microsemi-CorporationBDA---38 K
PSMN040-200WN-channel TrenchMOS transistorPhilips-SemiconductorsSOT429---86 K
TDA5940-2Video and sound IF with V&S SCARTInfineon-formely-Siemens-240°C85°C242 K
VHB40-28FNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C18 K
VHB40-28SNPN silicon RF power transistorAdvanced-Semiconductor-Inc--4-65°C200°C17 K
XM28C040-204M (512K x 8bit) 5 volt byte alterable E2PROMdistributor-320°C70°C76 K
XM28C040-254M (512K x 8bit) 5 volt byte alterable E2PROMdistributor-320°C70°C76 K
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