| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MAX40-22.0C | 22.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
| MAX40-24.0C | 24.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
| MAX40-24.0CA | 24.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
| MAX40-26.0C | 26.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
| MAX40-26.0CA | 26.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
| MAX40-28.0C | 28.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
| MAX40-28.0CA | 28.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications | distributor | - | 2 | - | - | 810 K |
| PSMN040-200W | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 87 K |
| QL3040-2PB456C | 40,000 usable PLD gate pASIC 3 FPGA combining high performance and high density. | distributor | PBGA | 456 | 0°C | 70°C | 477 K |
| QL3040-2PQ208M | 40,000 usable PLD gate pASIC3 FPGA combining high performance and high density. | distributor | PQFP | 208 | -55°C | 125°C | 239 K |
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