| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FG4000BX-90DA | 4500V, 4000A phase control asymmetrical thyristor | distributor | - | - | - | - | 71 K |
| FG4000BX-90DA | 4500V, 4000A phase control asymmetrical thyristor | distributor | - | - | - | - | 71 K |
| KM416C4000BS-45 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 45ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 826 K |
| KM416C4000BS-5 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 826 K |
| KM416C4000BS-6 | 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns | Samsung-Electronic | TSOP(II) | 50 | 0°C | 70°C | 826 K |
| KM684000BLGI-5 | 512Kx8 bit CMOS static RAM, 55ns | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 171 K |
| KM684000BLGI-5L | 512Kx8 bit CMOS static RAM, 55ns, low power | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 171 K |
| KM684000BLGI-7 | 512Kx8 bit CMOS static RAM, 70ns | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 171 K |
| KM684000BLGI-7L | 512Kx8 bit CMOS static RAM, 70ns, low power | Samsung-Electronic | SOP | 32 | -40°C | 85°C | 171 K |
| MA4P4000B | High power PIN diode | M-A-COM---manufacturer-of-RF | SMQ | 2 | -65°C | 175°C | 311 K |
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