Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BS616LV4011BC | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit | distributor | BGA | 48 | 0°C | 70°C | 231 K |
BS616LV4011BI | 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit | distributor | BGA | 48 | -40°C | 85°C | 231 K |
HCC4011BF | Quad 2 input NAND gate | SGS-Thomson-Microelectronics | CERDIP | 14 | -55°C | 125°C | 287 K |
HCC4011BF | Quad 2 input NAND gate | SGS-Thomson-Microelectronics | CERDIP | 14 | -55°C | 125°C | 287 K |
HCF4011BEY | Quad 2 input NAND gate | SGS-Thomson-Microelectronics | DIP | 14 | -40°C | 85°C | 287 K |
MC14011BCL | Quad 2-input NAND gate | Motorola | DIP | 14 | -55°C | 125°C | 327 K |
MC14011BCP | Quad 2-input NAND gate | Motorola | PDIP | 14 | -55°C | 125°C | 327 K |
MC14011BD | Quad 2-input NAND gate | Motorola | SOIC | 14 | -55°C | 125°C | 327 K |
SL4011BD | Quad 2-input NAND gate. High-voltage silicon-gate CMOS. | distributor | SOIC | 14 | -55°C | 125°C | 30 K |
SL4011BN | Quad 2-input NAND gate. High-voltage silicon-gate CMOS. | distributor | DIP | 14 | -55°C | 125°C | 30 K |
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