| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF540FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 53 K |
| PA7140FI-20 | 20ns programmable electrically erasable logic array | distributor | TQFP | 44 | -40°C | 85°C | 466 K |
| PA7140FI-25 | 25ns programmable electrically erasable logic array | distributor | TQFP | 44 | -40°C | 85°C | 466 K |
| STH16NA40FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 73 K |
| STH18NB40FI | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 12.4 A Current Idm pulse 73.6 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 400 V Resistance Rds on 0.3 R | SGS-Thomson-Microelectronics | - | - | - | - | 73 K |
| STP10NA40FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 203 K |
| STP4NA40FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 198 K |
| STP7NA40FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| TMBYV10-40FILM | SMALL SIGNAL SCHOTTKY DIODES | SGS-Thomson-Microelectronics | - | - | - | - | 82 K |
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