| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1410313 | Bobbin type inductor. Inductance (+-10% at 1kHz) 10uH. | distributor | - | 2 | -40°C | 85°C | 91 K |
| 1N4103 | 500mW low noise silicon zener diode. Nominal zener voltage 9.1V. | distributor | - | 2 | -65°C | 200°C | 178 K |
| 1N4103 | Nom zener voltage:9.1V; low level zener diode, low current: 250uA - low noise | distributor | - | - | - | - | 37 K |
| 1N4103 | 9.1V zener voltage regulator diode | Microsemi-Corporation | - | 2 | -65°C | 200°C | 83 K |
| 1N4103C | 500mW low noise silicon zener diode. Nominal zener voltage 9.1V. 2% tolerance. | distributor | - | 2 | -65°C | 200°C | 178 K |
| 1N4103D | 500mW low noise silicon zener diode. Nominal zener voltage 9.1V. 1% tolerance. | distributor | - | 2 | -65°C | 200°C | 178 K |
| FJV4103R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 56 K |
| KM44C4103CKL-5 | 4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 376 K |
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