| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N4105 | Nom zener voltage:11.0V; low level zener diode, low current: 250uA - low noise | distributor | - | - | - | - | 37 K |
| 1N4105 | 11V zener voltage regulator diode | Microsemi-Corporation | - | 2 | -65°C | 200°C | 83 K |
| FJV4105R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 88 K |
| IRFR4105TRL | N-channel power MOSFET for fast switching applications, 55V, 27A | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
| IRFR4105TRR | N-channel power MOSFET for fast switching applications, 55V, 27A | International-Rectifier | - | 3 | -55°C | 175°C | 144 K |
| IRFR4105Z | N-channel power MOSFET for fast switching applications, 55V, 30A | International-Rectifier | - | 3 | -55°C | 175°C | 206 K |
| IRFU4105Z | N-channel power MOSFET for fast switching applications, 55V, 30A | International-Rectifier | - | 3 | -55°C | 175°C | 206 K |
| IRFU4105Z | N-channel power MOSFET for fast switching applications, 55V, 30A | International-Rectifier | - | 3 | -55°C | 175°C | 206 K |
| KM44C4105CK-5 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 378 K |
| KM44C4105CK-6 | 4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 28 | 0°C | 70°C | 378 K |
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