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411D

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4E160411D-B4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.Samsung-ElectronicSOJ260°C70°C256 K
K4E160411D-B4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.Samsung-ElectronicSOJ240°C70°C256 K
K4E160411D-F4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.Samsung-Electronic-260°C70°C256 K
K4E170411D-B4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.Samsung-ElectronicSOJ260°C70°C256 K
K4E170411D-B4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.Samsung-ElectronicSOJ240°C70°C256 K
K4E170411D-F4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.Samsung-Electronic-260°C70°C256 K
RB411DSchottky barrier diodeROHMSMD33--55 K
UCC39411D LOW POWER SYNCHRONOUS BOOST CONVERTERTexas-Instruments-80°C70°C143 K
UCC39411DTR LOW POWER SYNCHRONOUS BOOST CONVERTERTexas-InstrumentsD80°C70°C143 K
UNR411DSilicon PNP epitaxial planer transistor with biult-in resistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----180 K
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