Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FP412D250 | Differential magneto resistor | Infineon-formely-Siemens | - | 3 | -40°C | 175°C | 201 K |
K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 256 K |
K4E160412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 256 K |
K4E160412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. | Samsung-Electronic | - | 26 | 0°C | 70°C | 256 K |
K4E170412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 256 K |
K4E170412D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 256 K |
K4E170412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | - | 26 | 0°C | 70°C | 256 K |
K4E170412D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. | Samsung-Electronic | - | 24 | 0°C | 70°C | 256 K |
UCC39412D | LOW POWER SYNCHRONOUS BOOST CONVERTER | Texas-Instruments | - | 8 | 0°C | 70°C | 143 K |
UCC39412DTR | LOW POWER SYNCHRONOUS BOOST CONVERTER | Texas-Instruments | D | 8 | 0°C | 70°C | 143 K |
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