Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
EDI9F416128C100BNC | 100ns; 5V power supply; 4 x 128K x 16 static RAM CMOS module | distributor | - | 80 | 0°C | 70°C | 459 K |
EDI9F416128C100BNC | 100ns; 5V power supply; 4 x 128K x 16 static RAM CMOS module | distributor | - | 80 | 0°C | 70°C | 459 K |
EDI9F416128C85BNC | 85ns; 5V power supply; 4 x 128K x 16 static RAM CMOS module | distributor | - | 80 | 0°C | 70°C | 459 K |
EDI9F416128LP100BNC | 100ns; 5V power supply; 4 x 128K x 16 static RAM CMOS module | distributor | - | 80 | 0°C | 70°C | 459 K |
EDI9F416128LP100BNC | 100ns; 5V power supply; 4 x 128K x 16 static RAM CMOS module | distributor | - | 80 | 0°C | 70°C | 459 K |
EDI9F416128LP70BNC | 70ns; 5V power supply; 4 x 128K x 16 static RAM CMOS module | distributor | - | 80 | 0°C | 70°C | 459 K |
EDI9F416128LP85BNC | 85ns; 5V power supply; 4 x 128K x 16 static RAM CMOS module | distributor | - | 80 | 0°C | 70°C | 459 K |
K4E641612B-TL45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TL50 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
K4E641612B-TL60 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 885 K |
1 [2] [3] [4] |
---|