Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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KM416C1004CJ-45 | 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1004CJ-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1004CJ-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1004CJL-5 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1004CJL-6 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1204CJ-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
KM416C1204CJL-50 | 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 804 K |
M5M5V416CWG | 4194304-bit CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 10 | -40°C | 85°C | 85 K |
M5M5V416CWG-70HI | 4194304-bit CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 10 | -40°C | 85°C | 82 K |
M5M5Y416CWG-85HI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 48 | 0°C | 70°C | 87 K |
M5M5Y416CWG-85HI | 4194304-bit (262144-word by 16-bit) CMOS static RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | CSP | 48 | 0°C | 70°C | 87 K |
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