| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 416R8 | Toroidal surface mount inductor. Nominal inductance (10kHz rms 10mV AC) 6.8uH. | distributor | - | - | -40°C | 85°C | 172 K |
| 416R8 | Toroidal surface mount inductor. Nominal inductance (10kHz rms 10mV AC) 6.8uH. | distributor | - | - | -40°C | 85°C | 172 K |
| KM416RD8AC-RG60 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM416RD8AC-RK70 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM416RD8AC-RK80 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM416RD8AD-RG60 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM416RD8AD-RK70 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM416RD8AD-RK80 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM416RD8AS-RM80 | 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA | 54 | 0°C | 90°C | 3 M |
| KM416RD8AS-SM80 | 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA | 54 | 0°C | 90°C | 3 M |
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