Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GS832418B-133 | 133MHz 11ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 1 M |
GS832418B-133I | 133MHz 11ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 1 M |
GS832418B-150 | 150MHz 10ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 1 M |
GS832418B-166 | 166MHz 8.5ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 1 M |
GS832418B-200 | 200MHz 7.5ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 1 M |
GS832418B-225 | 225MHz 6.5ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 1 M |
GS832418B-250 | 250MHz 6ns 2M x 18 36Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 1 M |
KA2418B | Tone ringer with bridge diode | Samsung-Electronic | - | 8 | -20°C | 70°C | 38 K |
PZ1418B15U | NPN microwave power transistor | Philips-Semiconductors | SOT443 | - | - | - | 81 K |
PZ1418B15UJ | NPN microwave power transistor | Philips-Semiconductors | SOT443 | - | - | - | 81 K |
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