Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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NE4210M01 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 79 K |
NE4210M01-T1 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 79 K |
NE4210M01-T2 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 79 K |
NE4210S01-T1 | GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification | NEC-Electronics-Inc- | - | - | - | - | 65 K |
NE4210S01-T1B | GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification | NEC-Electronics-Inc- | - | - | - | - | 65 K |
SEL4210R | 4f Round Red LED Lamp | Sanken-Electric-Co- | - | - | - | - | 30 K |
SEL4210S | 4f Round Red LED Lamp | Sanken-Electric-Co- | - | - | - | - | 30 K |
UNR4210 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 178 K |
XN04210 | Silicon NPN epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 32 K |
XP04210 | Silicon NPN epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 32 K |
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