| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N4249 | Glass Passivated Junction Rectifier | General-Semiconductor | - | - | - | - | 51 K |
| 1N4249 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | A | - | - | - | 41 K |
| 1N4249 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | A | - | - | - | 41 K |
| 1N4249GP | Glass Passivated Junction Rectifier | General-Semiconductor | - | - | - | - | 61 K |
| MAX4249ESD | Dual, single-supply operation +2.4V to 5.5V, low-noise, low-distortion, Rail-to-Rail op amp. Gain bandwidth 22MHz, min stable gain 10V/V, with shutdown mode. | Maxim-Integrated-Producs | SO | 14 | -40°C | 85°C | 238 K |
| MAX4249EUB | Dual, single-supply operation +2.4V to 5.5V, low-noise, low-distortion, Rail-to-Rail op amp. Gain bandwidth 22MHz, min stable gain 10V/V, with shutdown mode. | Maxim-Integrated-Producs | microMAX | 10 | -40°C | 85°C | 238 K |
| P4249-08 | Allowable current:30mA; MCT photoconductive detector: 10um band infrared detector with high sensitivity and high-speed response | distributor | - | 2 | -40°C | 60°C | 141 K |
| PN4249 | PNP General Purpose Amplifier | Fairchild-Semiconductor | - | - | - | - | 24 K |
| PN4249 | 5V, 300mW PNP silicon transistor | distributor | - | 3 | -55°C | 150°C | 91 K |
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