| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MA43000 | 85-105 V, 0.333/2 GHz, high power circuit tested step recovery diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 200°C | 77 K |
| MA43002 | 45-70 V, 2/6 GHz, high power circuit tested step recovery diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 200°C | 77 K |
| MA43004 | 30-45 V, 3.3/13 GHz, high power circuit tested step recovery diode | M-A-COM---manufacturer-of-RF | - | - | -65°C | 200°C | 77 K |
| MA4P4300B | High power PIN diode | M-A-COM---manufacturer-of-RF | SMQ | 2 | -65°C | 175°C | 311 K |
| MAP110-4300 | Input voltage range:85-264V, multiple output voltage, power supplier | distributor | - | - | 0°C | 70°C | 279 K |
| MSK4300D | 75 V, 10A, 3 phase MOSFET bridge with intelligent integrated gate drive | distributor | - | 10 | -40°C | 85°C | 268 K |
| MSK4300HU | 75 V, 10A, 3 phase MOSFET bridge with intelligent integrated gate drive | distributor | - | 10 | -55°C | 125°C | 268 K |
| MSK4300S | 75 V, 10A, 3 phase MOSFET bridge with intelligent integrated gate drive | distributor | - | 10 | -40°C | 85°C | 268 K |
| MSK4300U | 75 V, 10A, 3 phase MOSFET bridge with intelligent integrated gate drive | distributor | - | 10 | -40°C | 85°C | 268 K |
| TEFT4300 | Photo transistor | Vishay-Telefunken | - | - | - | - | 78 K |
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