| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S643232F-TL55 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 183MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
| K4S643232F-TL60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
| MAX4323ESA | Single, low-cost, low-power, Rail-to-Rail I/O op amp. BW 5MHz, shutdown yes. | Maxim-Integrated-Producs | SO | 8 | -40°C | 85°C | 226 K |
| MAX4323EUA | Single, low-cost, low-power, Rail-to-Rail I/O op amp. BW 5MHz, shutdown yes. | Maxim-Integrated-Producs | microMAX | 8 | -40°C | 85°C | 226 K |
| MAX4323EUT | Single, low-cost, low-power, Rail-to-Rail I/O op amp. BW 5MHz, shutdown yes. | Maxim-Integrated-Producs | - | 6 | -40°C | 85°C | 226 K |
| UPD4564323G5-A10-9JH | 64M-bit(512K-word x 32-bit x 4-bank)SDRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| UPD4564323G5-A10B-9JH | 64M-bit(512K-word x 32-bit x 4-bank)SDRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| UPD4564323G5-A70-9JF | 64M-bit(512K-word x 32-bit x 4-bank)SDRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| UPD4564323G5-A70-9JH | 64M-bit(512K-word x 32-bit x 4-bank)SDRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
| UPD4564323G5-A80-9JH | 64M-bit(512K-word x 32-bit x 4-bank)SDRAM | NEC-Electronics-Inc- | - | - | - | - | 1 M |
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