| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MAX435C/D | Wideband transconductance amplifier. 275MHz bandwidth, 450microA shutdown capability. | Maxim-Integrated-Producs | Dice | - | 0°C | 70°C | 700 K |
| MAX435CPD | Wideband transconductance amplifier. 275MHz bandwidth, 450microA shutdown capability. | Maxim-Integrated-Producs | Plastic DIP | 14 | 0°C | 70°C | 700 K |
| MAX435CSD | Wideband transconductance amplifier. 275MHz bandwidth, 450microA shutdown capability. | Maxim-Integrated-Producs | SO | 14 | 0°C | 70°C | 700 K |
| MAX435CSD | Wideband transconductance amplifier. 275MHz bandwidth, 450microA shutdown capability. | Maxim-Integrated-Producs | SO | 14 | 0°C | 70°C | 700 K |
| MAX435EPD | Wideband transconductance amplifier. 275MHz bandwidth, 450microA shutdown capability. | Maxim-Integrated-Producs | Plastic DIP | 14 | -40°C | 85°C | 700 K |
| MAX435EPD | Wideband transconductance amplifier. 275MHz bandwidth, 450microA shutdown capability. | Maxim-Integrated-Producs | Plastic DIP | 14 | -40°C | 85°C | 700 K |
| MAX435ESD | Wideband transconductance amplifier. 275MHz bandwidth, 450microA shutdown capability. | Maxim-Integrated-Producs | SO | 14 | -40°C | 85°C | 700 K |
| MJE4350 | 100V complementary silicon high-power transistor | distributor | - | 3 | -65°C | 150°C | 135 K |
| MJE4351 | 120V complementary silicon high-power transistor | distributor | - | 3 | -65°C | 150°C | 135 K |
| MJE4352 | 140V complementary silicon high-power transistor | distributor | - | 3 | -65°C | 150°C | 135 K |
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