| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N4400 | 500mW NPN silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 182 K |
| MSK4400D | 75 V, 10A, 3-phase MOSFET bridge with intelligent integrated gate drive | distributor | - | 28 | -40°C | 125°C | 275 K |
| MSK4400S | 75 V, 10A, 3-phase MOSFET bridge with intelligent integrated gate drive | distributor | - | 28 | -40°C | 125°C | 275 K |
| MSK4400U | 75 V, 10A, 3-phase MOSFET bridge with intelligent integrated gate drive | distributor | - | 28 | -40°C | 125°C | 275 K |
| SMJ44400-10HRM | 1M x 4 DRAM dynamic random-access memory | distributor | Flat pack | 20 | -55°C | 125°C | 351 K |
| SMJ44400-10JDM | 1M x 4 DRAM dynamic random-access memory | distributor | DIP | 20 | -55°C | 125°C | 351 K |
| SMJ44400-12HRM | 1M x 4 DRAM dynamic random-access memory | distributor | Flat pack | 20 | -55°C | 125°C | 351 K |
| SMJ44400-12JDM | 1M x 4 DRAM dynamic random-access memory | distributor | DIP | 20 | -55°C | 125°C | 351 K |
| SMJ44400-80HRM | 1M x 4 DRAM dynamic random-access memory | distributor | Flat pack | 20 | -55°C | 125°C | 351 K |
| SMJ44400-80JDM | 1M x 4 DRAM dynamic random-access memory | distributor | DIP | 20 | -55°C | 125°C | 351 K |
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