| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N4400 | General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 73 K |
| AS4C14400-40JC | 1M-bit ? 4 CMOS DRAM fast page mode, single 5V power supply, 40ns | Alliance-Semiconductor-Corporation | SOJ | 20 | 0°C | 70°C | 608 K |
| AS4C14400-40JC | 1M-bit ? 4 CMOS DRAM fast page mode, single 5V power supply, 40ns | Alliance-Semiconductor-Corporation | SOJ | 20 | 0°C | 70°C | 608 K |
| AS4C14400-50JC | 1M-bit ? 4 CMOS DRAM fast page mode, single 5V power supply, 50ns | Alliance-Semiconductor-Corporation | SOJ | 20 | 0°C | 70°C | 608 K |
| AS4C14400-60JC | 1M-bit ? 4 CMOS DRAM fast page mode, single 5V power supply, 60ns | Alliance-Semiconductor-Corporation | SOJ | 20 | 0°C | 70°C | 608 K |
| T500144004AQ | 1400V, 40A phase control single thyristor | distributor | - | - | - | - | 1 M |
| TMS44400DJ-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, 5.0V | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
| TMS44400DJ-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, 5.0V | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
| TMS44400PDJ-70 | 1048576-word by 4-bit dynamic random-access memories, 70 ns, self-refresh, 5V | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
| TMS44400PDJ-80 | 1048576-word by 4-bit dynamic random-access memories, 80 ns, self-refresh, 5V | Texas-Instruments | SOJ | 20 | 0°C | 70°C | 657 K |
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