| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ATF-44101 | 2-8GHz medium power gallium arsenide FET | distributor | - | 4 | - | - | 65 K |
| CEM4410 | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 8 | -55°C | 150°C | 497 K |
| CEM4410A | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 8 | -55°C | 150°C | 496 K |
| FAR-F6CE1G4410-K220-V | Piezoelectric SAW BPF(700 to 1700 MHz) | Fujitsu-Microelectronis | SMT | 6 | -30°C | 85°C | 515 K |
| FAR-F6CE1G4410-K220-U | Piezoelectric SAW BPF(700 to 1700 MHz) | Fujitsu-Microelectronis | SMT | 6 | -30°C | 85°C | 515 K |
| FAR-F6CP-1G4410-D207-V | Piezoelectric SAW BPF(700 to 1700 MHz) | Fujitsu-Microelectronis | - | 4 | -30°C | 85°C | 230 K |
| FAR-F6CP-1G4410-D207-U | Piezoelectric SAW BPF(700 to 1700 MHz) | Fujitsu-Microelectronis | - | 4 | -30°C | 85°C | 230 K |
| GLT44108-40J4 | 40ns; 512K x 8 CMOS dynamic RAM with fast page mode | distributor | SOJ | 28 | 0°C | 70°C | 399 K |
| GLT44108-50J4 | 50ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 399 K |
| GLT44108-60J4 | 60ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 399 K |
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