Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N4449 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | distributor | - | 2 | -65°C | 175°C | 47 K |
1N4449 | Small signal switching diode. Peak reverse voltage VRM = 100 V. Maximum average rectified current IAV = 150 mA. | distributor | - | 2 | -65°C | 175°C | 47 K |
1N4449 | 100 V, 150 mA, Silicon epitaxial planar diode | distributor | - | 2 | - | - | 23 K |
1N4449 | 100 V, 150 mA, silicon epitaxial planar diode | distributor | DO | 2 | - | - | 88 K |
1N4449 | Signal or Computer Diode | Microsemi-Corporation | - | - | - | - | 32 K |
2N4449 | Chip: geometry 0005; polarity NPN | distributor | - | - | - | - | 30 K |
2SC4449 | NPN triple diffused planar silicon transistor, TV camera deflection, high-voltage driver application | SANYO-Electric-Co--Ltd- | 2003A | 3 | - | - | 75 K |
MAX4449ESE | 6500V/microsec, wideband, high-output-current, single-ended-to-differential line driver with enable. Small-signal bandwidth 400MHz, external gain selection >-+5V/V | Maxim-Integrated-Producs | Narrow SO | 16 | -40°C | 85°C | 175 K |
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