Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N4451 | Small signal switching diode. Peak reverse voltage VRM = 40 V. Maximum average rectified current IAV = 150 mA. | distributor | - | 2 | -65°C | 175°C | 47 K |
1N4451 | 40 V, 150 mA, Silicon epitaxial planar diode | distributor | - | 2 | - | - | 23 K |
1N4451 | 40 V, 150 mA, silicon epitaxial planar diode | distributor | - | 2 | - | - | 88 K |
2SC4451 | NPN triple diffused planar silicon transistor, high-voltage switching application | SANYO-Electric-Co--Ltd- | 2010B | 3 | - | - | 83 K |
EL4451CN | Wideband variable-gain amplifier, gain of 2 | distributor | PDIP | 14 | -40°C | 85°C | 302 K |
EL4451CS | Wideband variable-gain amplifier, gain of 2 | distributor | SO | 14 | -40°C | 85°C | 302 K |
MAX4451EKA-T | Ultra-small, low-cost, 210MHz, single-supply op amp Rail-to-Rail outputs. | Maxim-Integrated-Producs | - | 8 | -40°C | 85°C | 456 K |
MAX4451ESA | Ultra-small, low-cost, 210MHz, single-supply op amp Rail-to-Rail outputs. | Maxim-Integrated-Producs | SO | 8 | -40°C | 85°C | 456 K |
MIC4451 | 12A-Peak Low-Side MOSFET Driver | distributor | - | - | - | - | 105 K |
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