| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MH16V6445BWJ-5 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 127 K |
| MH16V6445BWJ-6 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 127 K |
| MH16V6445BWJ-6 | 1073741824-bit (16777216-word by 64-bit) dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 127 K |
| MH4V6445BXJJ-5 | 268435456-bit (4194304-word by 64-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | - | 0°C | 70°C | 152 K |
| MH4V6445BXJJ-5S | 268435456-bit (4194304-word by 64-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | - | 0°C | 70°C | 152 K |
| MH4V6445BXJJ-6 | 268435456-bit (4194304-word by 64-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | - | 0°C | 70°C | 152 K |
| MH4V6445BXJJ-6S | 268435456-bit (4194304-word by 64-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | - | 0°C | 70°C | 152 K |
| MH8V6445BWZJ-5 | 536870912-bit (8388608-word by 64-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 121 K |
| MH8V6445BWZJ-6 | 536870912-bit (8388608-word by 64-bit) dynamic DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 121 K |
| OPA445BM | High Voltage FET-Input Operational Amplifier | Burr-Brown-Corporation | 8 | - | -25°C | 85°C | 131 K |
| 1 [2] [3] |
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