| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQB4N90 | 900V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 609 K |
| FQI4N90 | 900V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 609 K |
| FQI4N90 | 900V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 609 K |
| FQP4N90 | 900V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 633 K |
| FQPF4N90 | 900V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 621 K |
| IXFK24N90Q | 900V HiPerFET power MOSFET Q-class | distributor | - | 3 | -40°C | 150°C | 87 K |
| IXFK24N90Q | 900V HiPerFET power MOSFET Q-class | distributor | - | 3 | -40°C | 150°C | 87 K |
| IXFX24N90Q | 900V HiPerFET power MOSFET Q-class | distributor | ISOPLUS247 | 3 | -40°C | 150°C | 87 K |
| STH4N90 | Power dissipation 125 W Transistor polarity N Channel Current Id cont. 4.2 A Current Idm pulse 16 A Pitch lead 5.45 mm Voltage Vds max 900 V Resistance Rds on 3.2 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 621 K |
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