| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTG34N100E2 | 34A, 1000V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 38 K |
| IXFH14N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 116 K |
| IXFT14N100 | 1000V HiPerFET power MOSFET | distributor | - | 4 | -55°C | 150°C | 116 K |
| IXTH14N100 | 1000V MegaMOS FET | distributor | - | 3 | -55°C | 150°C | 46 K |
| MTY14N100E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 232 K |
| RF1S4N100SM | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| RF1S4N100SM | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| RFP4N100 | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| STP4N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STP4N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
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