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4n50e

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTP4N50ETMOS E-FET high energy power FETMotorola-4-55°C150°C254 K
MTW14N50ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C205 K
PHP4N50E500 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C21 K
PHW14N50EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsTO2473-55°C150°C27 K
PHW14N50EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsSOT4293-55°C150°C27 K
PHX4N50E500 V, power MOS transistor isolated version of PHP4N50EPhilips-SemiconductorsSOT3--24 K
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