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4n60

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGTG24N60D124A, 600V N-Channel IGBTIntersil-Corporation----32 K
HGTG24N60D1D24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast DiodeIntersil-Corporation----35 K
IXSH24N60600V HiPerFAST IGBTdistributor-3-55°C150°C35 K
IXSH24N60A600V HiPerFAST IGBTdistributor-3-55°C150°C35 K
IXSH24N60U1600V HiPerFAST IGBT with diodedistributor-3-55°C150°C37 K
MGP14N60EInsulated gate bipolar transistorMotorola-3-55°C150°C125 K
MGP14N60EInsulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--121 K
MGP4N60EInsulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--120 K
MGP4N60EDInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--146 K
MGW14N60EDInsulated Gate Bipolar TransistorON-Semiconductor-3--154 K
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