| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGP14N60E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 125 K |
| MGP14N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 121 K |
| MGP4N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 120 K |
| MGP4N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 146 K |
| MGW14N60ED | Insulated Gate Bipolar Transistor | ON-Semiconductor | - | 3 | - | - | 154 K |
| PHB4N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 80 K |
| PHB4N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 80 K |
| PHB4N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 80 K |
| PHP4N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 80 K |
| PHP4N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 80 K |
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