| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQB4N80 | 800V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 659 K |
| IXFH14N80 | 800V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 100 K |
| IXFK34N80 | 800V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 48 K |
| IXFN44N80 | 800V HiPerFET power MOSFET single die MOSFET | distributor | - | 4 | -55°C | 150°C | 118 K |
| IXFR34N80 | 800V HiPerFET power MOSFET | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 59 K |
| IXFX34N80 | 800V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 48 K |
| IXTH14N80 | 800V MegaMOS FET | distributor | - | 3 | -55°C | 150°C | 80 K |
| MGP4N80E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 124 K |
| MTB4N80E1 | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 160 K |
| MTP4N80E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 159 K |
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