Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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DE150-501N04A | RF power MOSFET | distributor | - | 6 | -55°C | 150°C | 77 K |
HF150-50F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 23 K |
HF150-50S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
HF250-50 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
MSM5718C50-53GS-K | 18Mb(2Mx9) concurrent RDRAM | distributor | SHP | 32 | -55°C | 125°C | 549 K |
UTCLP2950-5.0 | 100mA low-dropout voltage regulator | distributor | - | 3 | -40°C | 125°C | 159 K |
UTCLP2950-5.0 | 100mA low-dropout voltage regulator | distributor | SOP | 8 | -40°C | 125°C | 159 K |
VFT150-50 | VHF power MOSFET N-channel enhancement mode | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 18 K |
XC2V250-5FG256C | Virtex-II 1.5V field programmable gate array. | distributor | Fine pitch BGA | 256 | 0°C | 85°C | 127 K |
XC2V250-5FG456C | Virtex-II 1.5V field programmable gate array. | distributor | Fine pitch BGA | 456 | 0°C | 85°C | 127 K |
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