| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N4150UR-1 | 75 volt switching diode | distributor | - | - | -65°C | 175°C | 33 K |
| IRG4PC50UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.65V @ VGE = 15V, IC = 27A | International-Rectifier | - | 3 | -55°C | 150°C | 213 K |
| IRG4PH50UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A | International-Rectifier | - | 3 | -55°C | 150°C | 229 K |
| K50UF | 5000 V rectifier 1.5-3 A forward current, 100 ns recovery time | distributor | - | 2 | -55°C | 150°C | 71 K |
| RM250UZ-24 | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
| RM250UZ-2H | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
| RM250UZ-H | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
| RM250UZ-M | 250A - transistor module for high voltage medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 48 K |
| TK11650UTL | 5.0V Three-terminal voltage regulator | distributor | - | 3 | -30°C | 80°C | 78 K |
| Z50UF | 5000 V rectifier 0.4-1.0 A forward current, 100 ns recovery time | distributor | - | 2 | -55°C | 150°C | 64 K |
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