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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTB50N06ELTMOS E-FET power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C150°C97 K
MTB50N06VTMOS V power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C175°C289 K
MTB50N06VTMOS V power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C175°C289 K
MTB50N06VLTMOS V power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C175°C249 K
MTP50N06ELTMOS E-FET power field effect transistorMotorola-4-55°C150°C232 K
MTP50N06VTMOS V power field effect transistorMotorola-4-55°C175°C179 K
MTP50N06VLTMOS V power field effect transistorMotorola-4-55°C175°C195 K
RF1S50N06LESM50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----412 K
RF1S50N06SM50A, 60V, 0.022 Ohm, N-Channel Power MOSFETsIntersil-Corporation----74 K
RFG50N06LE50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----412 K
RFP50N06LE50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----412 K
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