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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQB50N0660V N-Channel MOSFETFairchild-Semiconductor----648 K
FQB50N06L60V LOGIC N-Channel MOSFETFairchild-Semiconductor----654 K
MTB50N06VTMOS V power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C175°C289 K
MTB50N06VTMOS V power field effect transistor D2PAK for surface mountMotorolaDPAK4-55°C175°C289 K
OM50N06SA60V ultra low power MOSFETdistributor-3-55°C150°C60 K
OM50N06ST60V ultra low power MOSFETdistributor-3-55°C150°C60 K
PHB50N06LT55 V, TrenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C55 K
PHD50N06LT55 V, trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C65 K
PHP50N0660 V, power MOS transistorPhilips-SemiconductorsTO3--54 K
PHP50N06LT55 V, trenchMOS transistor logic level FETPhilips-SemiconductorsSOT3-55°C175°C65 K
STE250N06Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kVSGS-Thomson-Microelectronics----330 K
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