| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5116 | P-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 64 K |
| DF45116 | 1600V fast recovery diode | distributor | - | - | -40°C | 125°C | 56 K |
| EDE5116GBSA-4A-E | 512M; DRR-II SDRAM | distributor | BGA | 64 | 0°C | 70°C | 381 K |
| EDE5116GBSA-5A-E | 512M; DRR-II SDRAM | distributor | BGA | 64 | 0°C | 70°C | 381 K |
| EDS5116ABTA-6A | 512M; 166MHz SDRAM | distributor | TSOP | 54 | 0°C | 70°C | 564 K |
| EDS5116ABTA-6B | 512M; 166MHz SDRAM | distributor | TSOP | 54 | 0°C | 70°C | 564 K |
| IFN5116 | P-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 66 K |
| LH5116-10 | CMOS 16K (2K x 8)static RAM | Sharp | DIP | 24 | 0°C | 70°C | 87 K |
| LH5116SN | CMOS 16K (2K x 8)static RAM | Sharp | SOP | 24 | 0°C | 50°C | 58 K |
| SMP5116 | P-Channel silicon junction field-effect transistor | distributor | SMD | 3 | - | - | 66 K |
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