| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HYB5116165BJ-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 269 K |
| HYB5116165BJ-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 269 K |
| HYB5116165BJ-70 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 269 K |
| HYB5116405BT-500 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 323 K |
| HYB5116405BT-600 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 323 K |
| HYB5116405BT-700 | 4M x 4bit DRAM | Infineon-formely-Siemens | - | 26 | 0°C | 70°C | 323 K |
| LH5116 | CMOS 16K (2K x 8) static RAM | Sharp | DIP | 24 | -40°C | 85°C | 87 K |
| LH5116H | CMOS 16K (2K x 8) static RAM | Sharp | DIP | 24 | -40°C | 85°C | 87 K |
| MSM5116100A-60JS | 16,777,216-word x 1-bit dynamic RAM | distributor | SOJ | 26 | 0°C | 70°C | 1 M |
| UNR5116 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
| [1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
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