| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC5121 | Silicon NPN triple diffusion planar type power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 38 K |
| AS6UA51216-BC | 1.65V to 3.6V 512K x 16 Intelliwatt low-power CMOS SRAM with one chip enable | Alliance-Semiconductor-Corporation | CSP BGA | 48 | 0°C | 70°C | 205 K |
| AS6UA51216-BI | 1.65V to 3.6V 512K x 16 Intelliwatt low-power CMOS SRAM with one chip enable | Alliance-Semiconductor-Corporation | CSP BGA | 48 | -40°C | 85°C | 205 K |
| AS6UA51216-TC | 1.65V to 3.6V 512K x 16 Intelliwatt low-power CMOS SRAM with one chip enable | Alliance-Semiconductor-Corporation | TSOPII | 44 | 0°C | 70°C | 205 K |
| AS6UA51216-TI | 1.65V to 3.6V 512K x 16 Intelliwatt low-power CMOS SRAM with one chip enable | Alliance-Semiconductor-Corporation | TSOPII | 44 | -40°C | 85°C | 205 K |
| HD155121F | RF Transceiver IC for GSM and PCN dual band cellular systems | distributor | - | 48 | -20°C | 75°C | 429 K |
| HN29V51211T-50 | 512M AND type flash memory more than 32,113-sector (542,581,248-bit) | distributor | plastic TSOP I | 48 | 0°C | 70°C | 306 K |
| IS61NF51218-10BI | 512K x 18 flow-through no wait state bus sram | distributor | PBGA | 119 | -40°C | 85°C | 155 K |
| LX5121CDB | SCSI - Single Ended | Microsemi-Corporation | SSOP | - | - | - | 145 K |
| TQ5121 | 3V cellular TDMA/AMPS LNA/mixer receiver IC | TriQuint-Semiconductor-Inc- | QSOP | 16 | -40°C | 85°C | 153 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
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