| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CET451AN | N-channel enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 494 K |
| DT451AN | 30V; N-channel enchancement mode field effect transistor | distributor | - | 4 | -65°C | 150°C | 73 K |
| S-8051ANB-NA-X | Voltage detector | Seiko-Epson-Corporation | - | 3 | -20°C | 70°C | 1 M |
| S-8051ANR | Voltage detector | Seiko-Epson-Corporation | - | 3 | -20°C | 70°C | 1 M |
| S-8051ANR-NB-X | Voltage detector | Seiko-Epson-Corporation | - | 3 | -20°C | 70°C | 1 M |
| S-80751AN | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80751AN-JF-S | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80751AN-JF-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80751AN-JF-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 2 M |
| S-80851ANNP-EJF-T2 | Low-voltage high-precision voltage detector | Seiko-Epson-Corporation | - | 4 | -40°C | 85°C | 1 M |
| [1] 2 [3] |
|---|
