| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCX52-10 | PNP medium power transistor. | Philips-Semiconductors | SOT89 | 3 | -65°C | 150°C | 58 K |
| BCX52-10 | PNP medium power transistor. | Philips-Semiconductors | SOT89 | 3 | -65°C | 150°C | 58 K |
| BUK552-100A | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 10 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 71 K |
| G5852-103 | Reverse voltage:2V; spectral response range:0.9-2.1um; InGaAs PIN photodiode: long wavelength type (up to 2.1um). For NIR (near infrared) photometry, gas analyzer, water content analyzer | distributor | - | 3 | -40°C | 85°C | 255 K |
| G5852-11 | Reverse voltage:2V; spectral response range:0.9-2.1um; InGaAs PIN photodiode: long wavelength type (up to 2.1um). For NIR (near infrared) photometry, gas analyzer, water content analyzer | distributor | - | 3 | -40°C | 85°C | 255 K |
| G5852-13 | Reverse voltage:2V; spectral response range:0.9-2.1um; InGaAs PIN photodiode: long wavelength type (up to 2.1um). For NIR (near infrared) photometry, gas analyzer, water content analyzer | distributor | - | 3 | -40°C | 85°C | 255 K |
| P7152-10 | Active area: 1x1mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection | distributor | - | - | 0°C | 40°C | 103 K |
| P7752-10 | Active area: 1x1mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection | distributor | - | - | 0°C | 40°C | 103 K |
| PCF1252-1P | Threshold detector and reset generator | Philips-Semiconductors | - | 8 | -40°C | 85°C | 107 K |
| PCF1252-1T | Threshold detector and reset generator | Philips-Semiconductors | - | 8 | -40°C | 85°C | 107 K |
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