Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N5210 | 350mW NPN silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 146 K |
IRF5210 | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A | International-Rectifier | - | 3 | -55°C | 175°C | 125 K |
IRF5210S | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A | International-Rectifier | DDPak | 3 | -55°C | 175°C | 186 K |
IRF5M5210 | HEXFET power MOSFET thru-hole. BVDSS = -100V, RDS(on) = 0.07 Ohm, ID = -34A | International-Rectifier | - | 3 | -55°C | 150°C | 113 K |
IRF5N5210 | HEXFET power MOSFET surface mount. BVDSS = -100V, RDS(on) = 0.060 Ohm, ID = -31A | International-Rectifier | - | 3 | -55°C | 150°C | 118 K |
MSK5210HTU | Dual positive/negative, 3 AMP, ultra low dropout fixed voltage regulator | distributor | TOP TAB | 5 | -55°C | 125°C | 345 K |
MSK5210HZU | Dual positive/negative, 3 AMP, ultra low dropout fixed voltage regulator | distributor | Z PACK | 5 | -55°C | 125°C | 345 K |
MZ5210 | Triple-balanced mixer | M-A-COM---manufacturer-of-RF | VPAC | - | -54°C | 100°C | 106 K |
MZ5210C | Triple-balanced mixer | M-A-COM---manufacturer-of-RF | SMA | - | -54°C | 100°C | 106 K |
OM5210SC | 15Amp high efficiency rectifier | distributor | - | 7 | -55°C | 150°C | 17 K |
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