Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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DF25214 | 1400V fast recovery diode | distributor | - | - | -40°C | 125°C | 58 K |
DF45214 | 1400V fast recovery diode | distributor | - | - | - | - | 60 K |
MGFC5214 | Q-band 2-state power amplifier | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 8 | -20°C | 70°C | 34 K |
MUN5214DW1T1 | PNP silicon dual bias resistor transistor | Motorola | - | 6 | -65°C | 150°C | 179 K |
MUN5214DW1T1 | Dual Bias Resistor Transistor NPN | ON-Semiconductor | - | 6 | - | - | 179 K |
MUN5214T1 | Bias Resistor Transistor NPN | ON-Semiconductor | - | 3 | - | - | 230 K |
SA5214D | Postamplifier with link status indicator | Philips-Semiconductors | SOT163 | - | - | - | 83 K |
SA5214D | Postamplifier with link status indicator | Philips-Semiconductors | SOT163 | - | - | - | 83 K |
UNR5214 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 234 K |
UNR5214 | Silicon NPN epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 234 K |
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